RFD12N06RLESM9A
Manufacturer:
On Semiconductor
Mfr.Part #:
RFD12N06RLESM9A
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 49 W 60 V Continuous Drain Current (ID):18 A 15 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 60 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 71 MΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 17 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 49 W |
| Power Dissipation | 49 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Input capacitance | 485 pF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 63 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 41 ns |
| Element Configuration | Single |
| Fall Time | 50 ns |
| Rise Time | 34 ns |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 75 mΩ |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
Stock: 2957
Distributors
pcbx
pcbxUnit Price$1.01381
Ext.Price$1.01381
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01381 | $1.01381 |
| 10 | $0.64195 | $6.41950 |
| 25 | $0.56110 | $14.02750 |
| 50 | $0.49043 | $24.52150 |
| 100 | $0.42866 | $42.86600 |
| 300 | $0.38022 | $114.06600 |
| 500 | $0.33726 | $168.63000 |
| 1000 | $0.30785 | $307.85000 |